jiangsu changjiang electron ics technology co., lt d to-252-2l(4r) plastic-encapsulate mosfets CJU05N60 n-channel power mosfet description this a d vanced high voltage mosfet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a drain-to-source diode with fast recovery time. designed for high voltage, high speed switching applications such as power suplies, converters , power motor controls and bridge circuits. features z low r ds(on) z lower cap a citances z lower total gate charge z tighter v sd specifications z av alanche energ y specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltag e v ds 600 gate-source voltage v gs 30 v continuous drain c u rrent i d 4.5 a single pulsed avala n che energy (note1) e as 25 0 mj power diss i pation (note 2,t a =25 ) 1.25 maximum power dissipation (note 3,t c =25 ) p d 120 w thermal resistance from junc tion to ambie nt r ja 100 /w junction te mperature t j 150 storage temperature ra n ge t stg -50 ~+150 www.cj-elec.com 1 d,apr,2016 mark ing CJU05N60 = device code solid dot = green mo lding compound device, xxx if none, the normal device =date code equivalent circuit cju 0 5n 60 xxx to-252-2l(4r) 1. gate 2. drain 3. source 1 3 2 v (br)dss r ds(on) max i d ? 600v 4.5 a 2.5 @ 10v
parameter sy mbol test condition min typ max unit drain-source breakd own voltage v (br) dss v gs = 0v, i d =250a 600 gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 3.5 4.0 v gate-body lea kage current (note 4) i gss v ds =0v, v gs =30v 100 na zero gate voltage drain c urrent i dss v ds =600v, v gs =0v 1 a drain-source on-state resis tance r ds(on) v gs =10v, i d =2.25a 1.8 2.5 ? forw ard tranconductance (note 4) g fs v ds =40v, i d =2.25a 2.9 s input capacitance c iss 670 output capacitance c oss 72 reverse transfer capac itance c rss v ds =25v,v gs =0v, f =1mhz 8.5 pf turn-on delay time (note 4) t d (on) 30 rise time (note 4) t r 90 turn-off delay t ime (note 4) t d(off ) 85 fall ti me (note 4) t f v dd =300v, i d =4.5a, r g =25 ? 100 ns forw ard on voltage (note 4) v sd v gs =0v, i s =4.5a 1.4 v notes: 1. e as condition: t j =25 , v dd =50v,r g =25 ? ,l =16mh,i as =5a. 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4. pulse te st : pulse width 300s, duty cycle 2 %. www.cj-elec.com 2 d,apr,2016 mosfet electrical characteristics a t =25 unless otherwise specified
012345 0 1 2 3 4 0.0 0.3 0.6 0.9 1.2 1 .5 0.01 0.1 1 10 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 024681 0 1 2 0 3 6 9 12 15 0 5 10 15 20 25 30 0 2 4 6 8 10 t a =25 pulsed drain current i d (a) on- resistance r ds(o n) ( ) r ds(on) i d v gs =10v i s v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed tran sfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed i d =2.25a v gs r ds(on) on- resistance r ds(o n) ( ) gate to source voltage v gs (v) v gs =5.2v v gs =4.5v v gs =4.8v drain to source voltage v ds (v) out put characteristics drain current i d (a) t a =25 pulsed v gs =20v,10v,5.5v v gs =5v typical characteristics www.cj-elec.com 3 d,apr,2016
min .m a x . min .m a x . a2 . 200 2.38 00 . 08 70 . 094 a1 0.000 0.100 0.000 0.004 b 0.800 1.400 0.031 0.055 b 0.710 0.810 0.028 0.032 c 0.460 0.560 0.018 0.022 c1 0.460 0.560 0.018 0.022 d 6.500 6.700 0.256 0.264 d1 5.130 5.460 0.202 0.215 e 6.000 6.200 0.236 0.244 e e1 4.327 4.727 0.170 0.186 m n l 9.800 10.400 0.386 0.409 l1 l2 1.400 1.700 0.055 0.067 v - 0.190 ref. 1.778ref. 0.762ref. 0.070ref. 0.018ref. 4.830 ref. 2.9ref. 0.114ref. symbol dimensions in millimeters dimensions in inches 2.286 typ. 0.090 typ.
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to-252(4r)-2l tape and reel www.cj-elec.com
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